GaAs Enhancement-Mode NMOSFETs Enabled by Atomic Layer Epitaxial La1.8Y0.2O3 as Dielectric
Abstract
We demonstrate high-performance enhancement-mode (E-mode) GaAs NMOSFETs with an epitaxial gate dielectric layer of La1.8Y0.2O3 grown by atomic layer epitaxy (ALE) on GaAs(111) A substrates. A 0.5-mu m-gate-length device has a record-high maximum drain current of 336 mA/mm for surface-channel E-mode GaAs NMOSFETs, a peak intrinsic transconductance of 210 mS/mm, a subthreshold swing of 97 mV/dec, and an I-ON/I-OFF ratio larger than 10(7). The thermal stability of the single-crystalline La1.8Y0.2O3-single-crystalline GaAs interface is investigated by capacitance-voltage (C-V) and conductance-voltage (G-V) analysis. High-temperature annealing is found to be effective to reduce D-it.
Keywords
Atomic layer epitaxy (ALE); enhancement mode (E-mode); GaAs MOSFET; MOSFETS; PASSIVATION; CHANNEL; OXIDE
DOI
10.1109/LED.2013.2244058
Citation
Dong, L.; Wang, X. W.; Zhang, J. Y.; Li, X. F.; Gordon, R. G.; and Ye, Peide D., "GaAs Enhancement-Mode NMOSFETs Enabled by Atomic Layer Epitaxial La1.8Y0.2O3 as Dielectric" IEEE Electron Device Letters ( Volume: 34, Issue: 4, April 2013 )
Date of this Version
4-2013
Recommended Citation
Dong, L.; Wang, X. W.; Zhang, J. Y.; Li, X. F.; Gordon, R. G.; and Ye, Peide D., "GaAs Enhancement-Mode NMOSFETs Enabled by Atomic Layer Epitaxial La1.8Y0.2O3 as Dielectric" (2013). Birck and NCN Publications. Paper 1374.
http://dx.doi.org/10.1109/LED.2013.2244058
Comments
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