Full band calculations of the intrinsic lower limit of contact resistivity
Date of this Version
3-18-2013Citation
Appl. Phys. Lett. 102, 111605 (2013)
Abstract
The intrinsic lower limit of contact resistivity (rho(LL)(c)) for InAs, In0.53Ga0.47As, GaSb, and Si is calculated using a full band ballistic quantum transport approach. Surprisingly, our results show that rho(LL)(c) is almost independent of the semiconductor. An analytical model, derived for 1D, 2D, and 3D, correctly reproduces the numerical results and explains why rho(LL)(c) is very similar in all cases. Our analysis sets a minimal carrier density required to meet the International Technology Roadmap for Semiconductors call for rho(c) x 10(-9) Omega-cm(2) by 2023. Comparison with experiments shows there is room for improvement, which will come from optimizing interfacial properties. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4798238]
Discipline(s)
Nanoscience and Nanotechnology
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Copyright (year) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Appl. Phys. Lett. 102, 111605 (2013) and may be found at http://dx.doi.org/10.1063/1.4798238. The following article has been submitted to/accepted by Applied Physics Letters. Copyright (2013) J. Maassen, C. Jeong, A. Baraskar, M. Rodwell and M. Lundstrom. This article is distributed under a Creative Commons Attribution 3.0 Unported License.