Probing scattering mechanisms with symmetric quantum cascade lasers

Author

• Christoph Deutsch, Vienna University of Technology
• Hermann Detz, Vienna University of Technology
• Tobias Zederbauer, Vienna University of Technology
• Aaron M. Andrews, Vienna University of Technology
• Pavel Klang, Vienna University of Technology
• Tillmann Kubis, Birck Nanotechnology Center, Purdue UniversityFollow
• Gerhard Klimeck, Network for Computational Nanotechnology, Birck Nanotechnology Center, Purdue UniversityFollow
• Manfred E. Schuster, Max Planck Society
• Werner Schrenk, Vienna University of Technology
• Gottfried Strasser, Vienna University of Technology
• Karl Unterrainer, Vienna University of Technology

Abstract

A characteristic feature of quantum cascade lasers is their unipolar carrier transport. We exploit this feature and realize nominally symmetric active regions for terahertz quantum cascade lasers, which should yield equal performance with either bias polarity. However, symmetric devices exhibit a strongly bias polarity dependent performance due to growth direction asymmetries, making them an ideal tool to study the related scattering mechanisms. In the case of an InGaAs/GaAsSb heterostructure, the pronounced interface asymmetry leads to a significantly better performance with negative bias polarity and can even lead to unidirectionally working devices, although the nominal band structure is symmetric. The results are a direct experimental proof that interface roughness scattering has a major impact on transport/lasing performance. (C) 2013 Optical Society of America

Keywords

INTERFACE ROUGHNESS

DOI

10.1364/OE.21.007209

Citation

Optics Express Vol. 21, Issue 6, pp. 7209-7215 (2013)

Date of this Version

3-25-2013

Recommended Citation

Deutsch, Christoph; Detz, Hermann; Zederbauer, Tobias; Andrews, Aaron M.; Klang, Pavel; Kubis, Tillmann; Klimeck, Gerhard; Schuster, Manfred E.; Schrenk, Werner; Strasser, Gottfried; and Unterrainer, Karl, "Probing scattering mechanisms with symmetric quantum cascade lasers" (2013). Birck and NCN Publications. Paper 1369.
http://dx.doi.org/10.1364/OE.21.007209