Laser direct writing of silicon field effect transistor sensors
Date of this Version
3-4-2013Citation
Appl. Phys. Lett. 102, 093504 (2013)
Abstract
We demonstrate a single step technique to fabricate silicon wires for field effect transistor sensors. Boron-doped silicon wires are fabricated using laser direct writing in combination with chemical vapor deposition, which has the advantages of precise control of position, orientation, and length, and in situ doping. The silicon wires can be fabricated to have very rough surfaces by controlling laser operation parameters, and thus, have large surface areas, enabling high sensitivity for sensing. Highly sensitive pH sensing is demonstrated. We expect our method can be expanded to the fabrication of various sensing devices beyond chemical sensors. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4794147]
Discipline(s)
Nanoscience and Nanotechnology
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Copyright (year) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Appl. Phys. Lett. 102, 093504 (2013) and may be found at http://dx.doi.org/10.1063/1.4794147. The following article has been submitted to/accepted by Applied Physics Letters. Copyright (2013) Woongsik Nam, James I. Mitchell, Chookiat Tansarawiput, Minghao Qi and Xianfan Xu. This article is distributed under a Creative Commons Attribution 3.0 Unported License.