Analytical modeling of surface accumulation behavior of fully depleted SOI four gate transistors (G(4)-FETs)

Author

• Shehrin Sayed, Birck Nanotechnology Center, Purdue University; Bangladesh University of Engineering and TechnologyFollow
• M. Ziaur Rahman Khan, Bangladesh University of Engineering and Technology

Abstract

A charge sheet model is proposed to analyze the transistor characteristics of fully depleted SOI four gate field effect transistors (G(4)-FETs). The model is derived assuming a parabolic potential variation between the junction-gates and by solving 2-D Poisson's equation. The proposed model facilitates the calculation of surface potential and charge densities as a function of all gate biases. Modifying this charge sheet model for non-equilibrium condition, current-voltage and capacitance-voltage characteristics are also analyzed. Different back surface charge conditions are considered for each analysis. The models are compared with 3-D Silvaco/Atlas simulation results which show good agreement. (C) 2013 Elsevier Ltd. All rights reserved.

Keywords

Four gate transistor; 2-D Poisson's equation; Surface potential; Drain current; Transconductance; Accumulation capacitance; CHARGE-SHEET MODEL; SUBTHRESHOLD SLOPE; 4-GATE TRANSISTORS; THRESHOLD VOLTAGE; MOSFETS

DOI

10.1016/j.sse.2012.12.004

Citation

Solid-State Electronics Volume 81, March 2013, Pages 105–112

Date of this Version

3-2013

Recommended Citation

Sayed, Shehrin and Khan, M. Ziaur Rahman, "Analytical modeling of surface accumulation behavior of fully depleted SOI four gate transistors (G(4)-FETs)" (2013). Birck and NCN Publications. Paper 1364.
http://dx.doi.org/10.1016/j.sse.2012.12.004