Effects of forming gas anneal on ultrathin InGaAs nanowire metal-oxide-semiconductor field-effect transistors

Mengwei Si, Birck Nanotechnology Center, Purdue University
Jiangjiang Gu, Birck Nanotechnology Center, Purdue University
Xinwei Wang, Harvard University; Peking University
Jiayi Shao, Birck Nanotechnology Center, Purdue University
Xuefei Li, Birck Nanotechnology Center, Purdue University
Michael J. Manfra, Birck Nanotechnology Center, Purdue University
Roy G. Gordon, Harvard University
Peide D. Ye, Birck Nanotechnology Center, Purdue University

Date of this Version

3-4-2013

Citation

Appl. Phys. Lett. 102, 093505 (2013)

Comments

Copyright (2013) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Appl. Phys. Lett. 102, 093505 (2013) and may be found at http://dx.doi.org/10.1063/1.4794846. The following article has been submitted to/accepted by Applied Physics Letters. Copyright (2013) Mengwei Si, Jiangjiang J. Gu, Xinwei Wang, Jiayi Shao, Xuefei Li, Michael J. Manfra, Roy G. Gordon and Peide D. Ye. This article is distributed under a Creative Commons Attribution 3.0 Unported License.

Abstract

InGaAs gate-all-around metal-oxide-semiconductor field-effect transistors (MOSFETs) with 6 nm nanowire thickness have been experimentally demonstrated at sub-80 nm channel length. The effects of forming gas anneal (FGA) on the performance of these devices have been systematically studied. The 30min 400 degrees C FGA (4% H-2/96% N-2) is found to improve the quality of the Al2O3/InGaAs interface, resulting in a subthreshold slope reduction over 20mV/dec (from 117mV/dec in average to 93mV/dec). Moreover, the improvement of interface quality also has positive impact on the on-state device performance. A scaling metrics study has been carried out for FGA treated devices with channel lengths down to 20nm, indicating excellent gate electrostatic control. With the FGA passivation and the ultra-thin nanowire structure, InGaAs MOSFETs are promising for future logic applications. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4794846]

Discipline(s)

Nanoscience and Nanotechnology

 

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