Structural and electronic properties of highly doped topological insulator Bi2Se3 crystals
Abstract
We present a study of the structural and electronic properties of highly doped topological insulator Bi2Se3 single crystals synthesized by the Bridgman method. Lattice structural characterizations by X-ray diffraction, scanning tunneling microscopy, and Raman spectroscopy confirmed the high quality of the as-grown single crystals. The topological surface states in the electronic band structure were directly revealed by angle-resolved photoemission spectroscopy. Transport measurements showed that the conduction was dominated by the bulk carriers and confirmed a previously observed bulk quantum Hall effect in such highly doped Bi2Se3 samples. We briefly discuss several possible strategies of reducing bulk conductance. (C) 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Keywords
topological insulators; Bi2Se3; bulk quantum Hall effect; transport; HIGH MAGNETIC-FIELDS; SHUBNIKOV-DE-HAAS; SINGLE DIRAC CONE; CYCLOTRON-RESONANCE; SURFACE-STATE; BI2TE3; SB2TE3; RESISTIVITY; TRANSPORT
DOI
10.1002/pssr.201206457
Citation
Rapid Research Letter. Structural and electronic properties of highly doped topological insulator Bi2Se3 crystals. Helin Cao, Suyang Xu, Ireneusz Miotkowski, Jifa Tian, Deepak Pandey, M. Zahid Hasan, Yong P. Chen. 6 December 2012
Date of this Version
2-2013
Recommended Citation
Cao, Helin; Xu, Suyang; Miotkowski, Ireneusz; Tian, Jifa; Pandey, Deepak; Hasan, M. Zahid; and Chen, Yong P., "Structural and electronic properties of highly doped topological insulator Bi2Se3 crystals" (2013). Birck and NCN Publications. Paper 1335.
http://dx.doi.org/10.1002/pssr.201206457