Nitrogen-doped graphene by microwave plasma chemical vapor deposition

A. Kumar, Birck Nanotechnology Center, Purdue University
A. A. Voevodin, Birck Nanotechnology Center, Purdue University; US Air Force Research Laboratory
R. Paul, Birck Nanotechnology Center, Purdue University
I. Altfeder, US Air Force Research Laboratory
Dmitry Zemlyanov, Birck Nanotechnology Center, Purdue University
Dmitri N. Zakharov, Birck Nanotechnology Center, Purdue University
Timothy S. Fisher, Birck Nanotechnology Center, Purdue University; US Air Force Research Laboratory

Abstract

Rapid synthesis of nitrogen-doped, few-layer graphene films on Cu foil is achieved by microwave plasma chemical vapor deposition. The films are doped during synthesis by introduction of nitrogen gas in the reactor. Raman spectroscopy, X-ray photoelectron spectroscopy, transmission electron microscopy and scanning tunneling microscopy reveal crystal structure and chemical characteristics. Nitrogen concentrations up to 2 at.% are observed, and the limit is linked to the rigidity of graphene films on copper surfaces that impedes further nitrogen substitutions of carbon atoms. The entire growth process requires only a few minutes without supplemental substrate heating and offers a promising path toward large-scale synthesis of nitrogen-doped graphene films. (c) 2012 Elsevier B.V. All rights reserved.

Discipline(s)

Nanoscience and Nanotechnology