Nitrogen-doped graphene by microwave plasma chemical vapor deposition

Author

• A. Kumar, Birck Nanotechnology Center, Purdue UniversityFollow
• A. A. Voevodin, Birck Nanotechnology Center, Purdue University; US Air Force Research LaboratoryFollow
• R. Paul, Birck Nanotechnology Center, Purdue University
• I. Altfeder, US Air Force Research Laboratory
• Dmitry Zemlyanov, Birck Nanotechnology Center, Purdue UniversityFollow
• Dmitri N. Zakharov, Birck Nanotechnology Center, Purdue UniversityFollow
• Timothy S. Fisher, Birck Nanotechnology Center, Purdue University; US Air Force Research LaboratoryFollow

Abstract

Rapid synthesis of nitrogen-doped, few-layer graphene films on Cu foil is achieved by microwave plasma chemical vapor deposition. The films are doped during synthesis by introduction of nitrogen gas in the reactor. Raman spectroscopy, X-ray photoelectron spectroscopy, transmission electron microscopy and scanning tunneling microscopy reveal crystal structure and chemical characteristics. Nitrogen concentrations up to 2 at.% are observed, and the limit is linked to the rigidity of graphene films on copper surfaces that impedes further nitrogen substitutions of carbon atoms. The entire growth process requires only a few minutes without supplemental substrate heating and offers a promising path toward large-scale synthesis of nitrogen-doped graphene films. (c) 2012 Elsevier B.V. All rights reserved.

Keywords

Graphene; Rapid synthesis; Nitrogen doping; FEW-LAYER GRAPHENE; CNX THIN-FILMS; CARBON; GROWTH; MOLECULES; GRAPHITE; CELLS

DOI

10.1016/j.tsf.2012.07.142

Citation

Thin Solid Films Volume 528, 15 January 2013, Pages 269–273

Date of this Version

1-15-2013

Recommended Citation

Kumar, A.; Voevodin, A. A.; Paul, R.; Altfeder, I.; Zemlyanov, Dmitry; Zakharov, Dmitri N.; and Fisher, Timothy S., "Nitrogen-doped graphene by microwave plasma chemical vapor deposition" (2013). Birck and NCN Publications. Paper 1333.
http://dx.doi.org/10.1016/j.tsf.2012.07.142