Design of high-current L-valley GaAs/AlAs0.56Sb0.44/InP (111) ultra-thin-body nMOSFETs
Abstract
We propose and analyze a high-current III-V transistor design using electron transport in the Gamma- and L-valleys of (111) GaAs. Using sp(3)d(5)s* empirical tight-binding model for band-structure calculations and the top-of-the-barrier transport model, improved drive current is demonstrated using L-valley transport in a strained GaAs channel grown on an (111) InP substrate. At a body thickness of 2 nm the (111) GaAs/InP MOSFET design outperforms both (100) Si and (100) GaAs/InP for all EOTs larger than 0.3nm.
Keywords
MOSFET; L-valley; tight-binding; GaAs; InP; top-of-the-barrier
DOI
10.1109/ICIPRM.2012.6403344
Citation
2012 International Conference on Indium Phosphide and Related Materials (IPRM). DOI: 10.1109/ICIPRM.2012.6403344
Date of this Version
2013
Recommended Citation
Mehrotra, Saumitra; Povolotskyi, Michael; Law, Jeremy; Kubis, Tillmann; Klimeck, Gerhard; and Rodwell, Mark, "Design of high-current L-valley GaAs/AlAs0.56Sb0.44/InP (111) ultra-thin-body nMOSFETs" (2013). Birck and NCN Publications. Paper 1321.
http://dx.doi.org/10.1109/ICIPRM.2012.6403344