Dopant Metrology in Advanced FinFETs

Author

• G. Lansbergen, Delft University of Technology
• R. Rahman, Sandia National Laboratory
• G. C. Tettamanzi, Delft University of Technology; University of New South Wales
• J. Verduijn, Delft University of Technology; University of New South Wales
• L. C. L. Hollenberg, University of Melbourne
• Gerhard Klimeck, Birck Nanotechnology Center, Purdue University; California Institute of TechnologyFollow
• S. Rogge, Delft University of Technology; University of New South Wales

Abstract

Ultra-scaled FinFET transistors bear unique fingerprint-like device-to-device differences attributed to random single impurities. This paper describes how, through correlation of experimental data with multimillion atom tight-binding simulations using the NEMO 3-D code, it is possible to identify the impurity's chemical species and determine their concentration, local electric field and depth below the Si/SiO2 interface. The ability to model the excited states rather than just the ground state is the critical component of the analysis and allows the demonstration of a new approach to atomistic impurity metrology.

Keywords

QUANTUM DOTS; SINGLE; ATOM

Date of this Version

2013

Recommended Citation

Lansbergen, G.; Rahman, R.; Tettamanzi, G. C.; Verduijn, J.; Hollenberg, L. C. L.; Klimeck, Gerhard; and Rogge, S., "Dopant Metrology in Advanced FinFETs" (2013). Birck and NCN Publications. Paper 1311.
https://docs.lib.purdue.edu/nanopub/1311