Wideband Diode-based Reconfigurable Matching Network Operating at 36 dBm Input Power
Abstract
This paper presents wideband reconfigurable matching networks operating at high power in the GSM850 and GSM900 bands to counteract the detuning of mobile handset antennas caused by user interaction. High breakdown voltage varactor diodes are used as tuning elements. Single-diode, shunt-series diode, and two-diode topologies are investigated for power handling, and the effect of input power on matching network transducer gain, G T, is studied. Results show that a shunt-series diode topology can handle input powers of up to 3 6 dBm while maintaining G T degradation of less than 0.1 dB.
DOI
10.1109/APS.2012.6348859
Citation
Wideband diode-based reconfigurable matching network operating at 36 dBm input power Wesley N. Allen; Dimitrios Peroulis Proceedings of the 2012 IEEE International Symposium on Antennas and Propagation Year: 2012 Pages: 1 - 2
Date of this Version
7-8-2012
Recommended Citation
Allen, Wesley N. and Peroulis, Dimitrios, "Wideband Diode-based Reconfigurable Matching Network Operating at 36 dBm Input Power" (2012). Birck and NCN Publications. Paper 1279.
http://dx.doi.org/10.1109/APS.2012.6348859