A grain boundary phase transition in Si-Au

Author

• Shuailei Ma, Lehigh University
• Kaveh Meshinchi Asl, Clemson University
• Chookiat Tansarawiput, Birck Nanotechnology Center, Purdue UniversityFollow
• Patrick R. Cantwell, Lehigh University
• Minghao Qi, Birck Nanotechnology Center, Purdue UniversityFollow
• Martin P. Harmer, Lehigh University
• Jian Luo, Clemson University

Abstract

A grain boundary transition from a bilayer to an intrinsic (nominally clean) boundary is observed in Si-Au. An atomically abrupt transition between the two complexions (grain boundary stabilized phases) implies the occurrence of a first-order interfacial phase transition associated with a discontinuity in the interfacial excess. This observation supports a grain-boundary complexion theory with broad applications. This transition is atypical in that the monolayer complexion is absent. A model is proposed to explain the bilayer stabilization and the origin of this complexion transition. (C) 2011 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

Keywords

Grain boundary; Phase transition; Complexion; Interfaces; Aberration-corrected STEM; NICKEL-DOPED TUNGSTEN; INTERGRANULAR FILMS; AMORPHOUS FILMS; BI2O3-DOPED ZNO; SURFICIAL FILMS; INTERFACES; SURFACES; COMPLEXION; ALUMINA; OXIDE

DOI

10.1016/j.scriptamat.2011.10.011

Citation

Scripta Materialia Volume 66, Issue 5, March 2012, Pages 203–206

Date of this Version

3-2012

Recommended Citation

Ma, Shuailei; Asl, Kaveh Meshinchi; Tansarawiput, Chookiat; Cantwell, Patrick R.; Qi, Minghao; Harmer, Martin P.; and Luo, Jian, "A grain boundary phase transition in Si-Au" (2012). Birck and NCN Publications. Paper 1240.
http://dx.doi.org/10.1016/j.scriptamat.2011.10.011