Rapid synthesis of few-layer graphene over Cu foil
Abstract
We report a unique process for rapid synthesis of few-layer graphene films on Cu foil by microwave plasma chemical vapor deposition (MPCVD). We show that the plasma/metal interaction can be advantageous for a rapid synthesis of such thin films. The process can produce films of controllable quality from amorphous to highly crystalline by adjusting plasma conditions during growth processes of similar to 100 s duration and with no supplemental substrate heating. Films have been characterized using Raman spectroscopy, scanning electron microscopy, transmission electron microscopy and X-ray photoelectron spectroscopy. The results help to identify the stages involved in the MPCVD deposition of thin carbon films on Cu foil, and the findings open new pathways for a rapid growth of few-layer graphene films. (C) 2011 Elsevier Ltd. All rights reserved.
Keywords
CHEMICAL-VAPOR-DEPOSITION; LARGE-AREA; RAMAN-SPECTROSCOPY; ENERGY CALIBRATION; FILMS; GRAPHITE; GROWTH; COPPER; CATALYST
DOI
10.1016/j.carbon.2011.11.033
Citation
Carbon Volume 50, Issue 4, April 2012, Pages 1546–1553
Date of this Version
4-2012
Recommended Citation
Kumar, A.; Voevoclin, A. A.; Zakharov, Dmitri N.; Zemlyanov, Dmitry; and Fisher, Timothy S., "Rapid synthesis of few-layer graphene over Cu foil" (2012). Birck and NCN Publications. Paper 1224.
http://dx.doi.org/10.1016/j.carbon.2011.11.033