Graphene Field-Effect Transistors on Undoped Semiconductor Substrates for Radiation Detection
Date of this Version5-2012
Graphene Field-Effect Transistors on Undoped Semiconductor Substrates for Radiation Detection Michael Foxe; Gabriel Lopez; Isaac Childres; Romaneh Jalilian; Amol Patil; Caleb Roecker; John Boguski; Igor Jovanovic; Yong P. Chen IEEE Transactions on Nanotechnology Year: 2012, Volume: 11, Issue: 3 Pages: 581 - 587
The use of a graphene field-effect transistors (GFETs) to detect radiation is proposed and analyzed. The detection mechanism used in the proposed detector architecture is based on the high sensitivity of graphene to the local change of electric field that can result from the interaction of radiation with a gated undoped semiconductor absorber (substrate) in a GFET. We have modeled a GFET-based radiation detector, and discussed its anticipated performance and potential advantages compared to conventional detector architectures.
Nanoscience and Nanotechnology