Graphene Field-Effect Transistors on Undoped Semiconductor Substrates for Radiation Detection

Author

• Michael Foxe, Penn State University
• Gabriel Lopez, Birck Nanotechnology Center, Purdue UniversityFollow
• Isaac Childres, Birck Nanotechnology Center, Purdue UniversityFollow
• Romaneh Jalilian, Birck Nanotechnology Center, Purdue University
• Amol Patil, Purdue UniversityFollow
• Caleb Roecker, Purdue UniversityFollow
• John Boguski, Purdue UniversityFollow
• Igor Jovanovic, Penn State University
• Yong P. Chen, Birck Nanotechnology Center, Purdue UniversityFollow

Abstract

The use of a graphene field-effect transistors (GFETs) to detect radiation is proposed and analyzed. The detection mechanism used in the proposed detector architecture is based on the high sensitivity of graphene to the local change of electric field that can result from the interaction of radiation with a gated undoped semiconductor absorber (substrate) in a GFET. We have modeled a GFET-based radiation detector, and discussed its anticipated performance and potential advantages compared to conventional detector architectures.

Keywords

FET; graphene; graphene devices; semiconductor radiation detectors; MONTE-CARLO CODE; FILMS

DOI

10.1109/TNANO.2012.2186312

Citation

Graphene Field-Effect Transistors on Undoped Semiconductor Substrates for Radiation Detection Michael Foxe; Gabriel Lopez; Isaac Childres; Romaneh Jalilian; Amol Patil; Caleb Roecker; John Boguski; Igor Jovanovic; Yong P. Chen IEEE Transactions on Nanotechnology Year: 2012, Volume: 11, Issue: 3 Pages: 581 - 587

Date of this Version

5-2012

Recommended Citation

Foxe, Michael; Lopez, Gabriel; Childres, Isaac; Jalilian, Romaneh; Patil, Amol; Roecker, Caleb; Boguski, John; Jovanovic, Igor; and Chen, Yong P., "Graphene Field-Effect Transistors on Undoped Semiconductor Substrates for Radiation Detection" (2012). Birck and NCN Publications. Paper 1208.
http://dx.doi.org/10.1109/TNANO.2012.2186312