Quantized Hall Effect and Shubnikov-de Haas Oscillations in Highly Doped Bi2Se3: Evidence for Layered Transport of Bulk Carriers
Date of this Version
5-23-2012Citation
Quantized Hall Effect and Shubnikov–de Haas Oscillations in Highly Doped Bi2Se3: Evidence for Layered Transport of Bulk Carriers Helin Cao, Jifa Tian, Ireneusz Miotkowski, Tian Shen, Jiuning Hu, Shan Qiao, and Yong P. Chen Phys. Rev. Lett. 108, 216803
Abstract
Bi2Se3 is an important semiconductor thermoelectric material and a prototype topological insulator. Here we report observation of Shubnikov-de Hass oscillations accompanied by quantized Hall resistances (R-xy) in highly doped n-type Bi2Se3 with bulk carrier concentrations of few 10(19) cm(-3). Measurements under tilted magnetic fields show that the magnetotransport is 2D-like, where only the c-axis component of the magnetic field controls the Landau level formation. The quantized step size in 1/R-xy is found to scale with the sample thickness, and average similar to e(2)/h per quintuple layer. We show that the observed magnetotransport features do not come from the sample surface, but arise from the bulk of the sample acting as many parallel 2D electron systems to give a multilayered quantum Hall effect. In addition to revealing a new electronic property of Bi2Se3, our finding also has important implications for electronic transport studies of topological insulator materials.
Discipline(s)
Nanoscience and Nanotechnology
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This is the published version of Helin Cao, Jifa Tian, Ireneusz Miotkowski, Tian Shen, Jiuning Hu, Shan Qiao, and Yong P. Chen. 13 May 2012. Quantized Hall Effect and Shubnikov–de Haas Oscillations in Highly Doped Bi2Se3: Evidence for Layered Transport of Bulk Carriers. First published in the Physical Review Letters and is available online at: http://dx.doi.org/10.1103/PhysRevLett.108.216803.