Experimental Investigation of Border Trap Generation in InGaAs nMOSFETs With Al2O3 Gate Dielectric Under PBTI Stress
Abstract
The reliability performance of InxGa1-xAs n-type metal-oxide-semiconductor field-effect transistors with Al2O3 gate dielectric under positive-bias temperature instability stress is investigated systematically. A model of stress-induced border traps was proposed to interpret all charge pumping and I-V experimental results excellently. The stress-induced border traps include recoverable donor traps and permanent acceptor traps with respective energy densities Delta D-SOX(Donor) (E) and Delta D-SOX(Acceptor) (E). The shapes of Delta D-SOX(Donor) (E) and Delta D-SOX(Acceptor) (E) have been extracted from experimental data Delta D-SOX(Acceptor) (E) mainly distributes in the conduction band of InGaAs with a tail extending to the mid-gap, whereas Delta D-SOX(Donor) (E) has a large distribution inside the energy gap and extends to the conduction band. The high density of Delta D-SOX(Donor) (E) in the energy gap induces large degradation in the OFF-current, which is particularly serious when the In composition x is raised to 0.65.
Keywords
Border traps; InGaAs n-type metal-oxide-semiconductor field-effect transistors (nMOSFETs); OFF-current; positive-bias temperature instability (PBTI); INTERFACE; MOSFETS
DOI
10.1109/TED.2012.2190417
Citation
Experimental Investigation of Border Trap Generation in InGaAs nMOSFETs With \hbox {Al}_{2}\hbox {O}_{3} Gate Dielectric Under PBTI Stress Guangfan Jiao; Chengjun Yao; Yi Xuan; Daming Huang; Peide D. Ye; Ming-Fu Li IEEE Transactions on Electron Devices Year: 2012, Volume: 59, Issue: 6 Pages: 1661 - 1667
Date of this Version
6-2012
Recommended Citation
Jiao, Guangfan; Yao, Chengjun; Xuan, Yi; Huang, Daming; Ye, Peide; and Li, Ming-Fu, "Experimental Investigation of Border Trap Generation in InGaAs nMOSFETs With Al2O3 Gate Dielectric Under PBTI Stress" (2012). Birck and NCN Publications. Paper 1189.
http://dx.doi.org/10.1109/TED.2012.2190417