Band offsets of atomic-layer-deposited Al2O3 on GaAs and the effects of surface treatment

Author

• N V. Nguyen, Natl Inst Stand & Technol, Div Semicond Elect
• Oleg A. Kirillov, Natl Inst Stand & Technol, Div Semicond Elect
• W Jiang, Natl Inst Stand & Technol, Div Semicond Elect
• Wenyong Wang, Natl Inst Stand & Technol, Div Semicond Elect
• John S. Suehle, Natl Inst Stand & Technol, Div Semicond Elect
• P. D. Ye, Birck Nanotechnology Center and School of Electrical and Computer Engineering, Purdue UniversityFollow
• Y Xuan, Intel Corp, Santa Clara
• N Goel, Intel Corp, Santa Clara
• K W. Choi, Intel Corp, Santa Clara
• Wilman Tsai, Intel Corp, Santa Clara
• S Sayan, Intel Corp, Santa Clara,

Abstract

The metal gate/high-k dielectric/III-V semiconductor band alignment is one of the most technologically important parameters. We report the band offsets of the Al/Al2O3/GaAs structure and the effect of GaAs surface treatment. The energy barrier at the Al2O3 and sulfur-passivated GaAs interface is found to be 3.0 +/- 0.1 eV whereas for the unpassivated or NH4OH-treated GaAs is 3.6 eV. At the Al/Al2O3 interface, all samples yield the same barrier height of 2.9 +/- 0.2 eV. With a band gap of 6.4 +/- 0.05 eV for Al2O3, the band alignments at both Al2O3 interfaces are established. (C) 2008 American Institute of Physics.

Citation

APPLIED PHYSICS LETTERS 93, 082105

Date of this Version

August 2008

Recommended Citation

Nguyen, N V.; Kirillov, Oleg A.; Jiang, W; Wang, Wenyong; Suehle, John S.; Ye, P. D.; Xuan, Y; Goel, N; Choi, K W.; Tsai, Wilman; and Sayan, S, "Band offsets of atomic-layer-deposited Al2O3 on GaAs and the effects of surface treatment" (2008). Birck and NCN Publications. Paper 118.
https://docs.lib.purdue.edu/nanopub/118