Abstract
Low-aluminum composition AlGaN/GaN double-barrier resonant tunneling structures were grown by plasma-assisted molecular-beam-epitaxy on free-standing c-plane GaN substrates grown by hydride-vapor phase epitaxy. Clear, exactly reproducible, negative-differential resistance signatures were observed from 4 x 4 mu m(2) devices at 1.5V and 1.7V at 77K. The relatively small value of the maximum peak-to-valley ratio (1.03) and the area dependence of the electrical characteristics suggest that charge transport is affected by leakage paths through dislocations. However, the reproducibility of the data indicates that electrical traps play no significant role in the charge transport in resonant tunneling diodes grown by molecular-beam-epitaxy under Ga-rich conditions on free-standing GaN substrates. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4729819]
Keywords
REVERSE-BIAS LEAKAGE; BULK GAN; INSTABILITIES
DOI
10.1063/1.4729819
Citation
D. Li, L. Tang, C. Edmunds, J. Shao, G. Gardner, M. J. Manfra, and O. Malis. Appl. Phys. Lett. 100, 252105 (2012); http://dx.doi.org/10.1063/1.4729819
Date of this Version
6-18-2012
Recommended Citation
Li, D.; Tang, L.; Edmunds, C.; Shao, J.; Gardner, G.; Manfra, Michael J.; and Malis, O., "Repeatable low-temperature negative-differential resistance from Al0.18Ga0.82N/GaN resonant tunneling diodes grown by molecular-beam epitaxy on free-standing GaN substrates" (2012). Birck and NCN Publications. Paper 1169.
http://dx.doi.org/10.1063/1.4729819
Comments
Copyright (2012) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Appl. Phys. Lett. 100, 252105 (2012) and may be found at http://dx.doi.org/10.1063/1.4729819. The following article has been submitted to/accepted by Applied Physics Letters. Copyright (2012) D. Li, L. Tang, C. Edmunds, J. Shao, G. Gardner, M. J. Manfra, and O. Malis. This article is distributed under a Creative Commons Attribution 3.0 Unported License.