Electron band alignment at the interface of (100)InSb with atomic-layer deposited Al2O3
Date of this Version
8-20-2012Citation
H.-Y. Chou, V. V. Afanas’ev, M. Houssa, A. Stesmans, Lin Dong and P. D. Ye. Appl. Phys. Lett. 101, 082114 (2012); http://dx.doi.org/10.1063/1.4747797
Abstract
From experiments on internal photoemission of electrons at the (100)InSb/Al2O3 interface, the top of the InSb valence band is found to be 3.05 +/- 0.10 eV below the oxide conduction band and corresponds to a conduction band offset of 2.9 +/- 0.1 eV. These results indicate that the top of valence band in InSb lies energetically at the same level as in GaSb and above the valence bands in InxGa1-xAs (0
Discipline(s)
Nanoscience and Nanotechnology
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Copyright 2012 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Appl. Phys. Lett. 101, 082114 (2012) and may be found at http://dx.doi.org/10.1063/1.4747797. The following article has been submitted to/accepted by Applied Physics Letters. Copyright (2012) H.-Y. Chou, V. V. Afanas’ev, M. Houssa, A. Stesmans, Lin Dong and P. D. Ye. This article is distributed under a Creative Commons Attribution 3.0 Unported License.