MoS2 Nanoribbon Transistors: Transition From Depletion Mode to Enhancement Mode by Channel-Width Trimming
Abstract
We study the channel width scaling of back-gated MoS2 metal-oxide-semiconductor field-effect transistors from 2 mu m down to 60 nm. We reveal that the channel conductance scales linearly with channel width, indicating no evident edge damage for MoS2 nanoribbons with widths down to 60 nm as defined by plasma dry etching. However, these transistors show a strong positive threshold voltage (V-T) shift with narrow channel widths of less than 200 nm. Our results also show that transistors with thinner channel thicknesses have larger V-T shifts associated with width scaling. Devices fabricated on a 6-nm-thick MoS2 crystal underwent the transition from depletion mode to enhancement mode.
Keywords
MoS2 nanoribbon; threshold voltage shift; width scaling; FIELD-EFFECT TRANSISTORS; LAYER-DEPOSITED AL2O3; LARGE-AREA; SINGLE; INSULATOR; SURFACE; GROWTH; MOSFET; PHASE
DOI
10.1109/LED.2012.2202630
Citation
MoS2 Nanoribbon Transistors: Transition From Depletion Mode to Enhancement Mode by Channel-Width Trimming Han Liu; Jiangjiang Gu; Peide D. Ye IEEE Electron Device Letters Year: 2012, Volume: 33, Issue: 9 Pages: 1273 - 1275
Date of this Version
9-2012
Recommended Citation
Liu, Han; Gu, Jiangjiang; and Ye, Peide D., "MoS2 Nanoribbon Transistors: Transition From Depletion Mode to Enhancement Mode by Channel-Width Trimming" (2012). Birck and NCN Publications. Paper 1144.
http://dx.doi.org/10.1109/LED.2012.2202630