Tunable, Dual-Gate, Silicon-on-Insulator (SOI) Nanoelectromechanical Resonators
Abstract
Resonant nanoelectromechanical systems (NEMS) have the potential to have significant impact in mass sensing, signal processing, and field detection applications, if the challenges associated with processing, material, and geometric variability can be mitigated. The research presented here details a breakthrough in the design and development of resonant NEMS aimed at addressing these challenges. Specifically, this study details the fabrication, characterization, and tuning of dual-gate silicon nanoelectromechanical resonators, which are transduced electrostatically and realized with close to 100% yield. These devices are fabricated on a silicon-on-insulator (SOI) substrate using only top-down microfabrication techniques and can be easily integrated with SOI-CMOS transistors, enabling the development of fully integrated CMOS-NEMS with highly tunable nonlinear frequency response characteristics.
Keywords
Dual-gate nanoresonators; electrostatic tuning; nonlinear tuning; silicon nanowire; NANOMECHANICAL RESONATORS; MASS DETECTION; ELECTROMECHANICAL RESONATOR; PARAMETRIC RESONANCE; NANOTUBE; OSCILLATORS; FABRICATION; RESOLUTION; DEVICES; SENSOR
DOI
10.1109/TNANO.2012.2212028
Citation
IEEE Transactions on Nanotechnology ( Volume: 11, Issue: 6, Nov. 2012 )
Date of this Version
11-2012
Recommended Citation
Yu, Lin; Pajouhi, Hossein; Nelis, Molly R.; Rhoads, Jeffrey F.; and Mohammadi, Saeed, "Tunable, Dual-Gate, Silicon-on-Insulator (SOI) Nanoelectromechanical Resonators" (2012). Birck and NCN Publications. Paper 1109.
http://dx.doi.org/10.1109/TNANO.2012.2212028