On the Interpretation of Ballistic Injection Velocity in Deeply Scaled MOSFETs (vol 59, pg 994, 2012)
Abstract
In the above-named article [ibid., vol. 59, no. 4, pp. 994-1001, Apr. 2012], the authors showed that the velocity deduced by analyzing transistor I-V data with the virtual-source transistor model of Khakifirooz, et al. (2009) is not always the velocity at the top of the energy barrier between the source and channel. Reference 1 in the Appendix of the original article (on screening in nanoscale MOSFETs) presented a qualitative explanation for why this discrepancy is more pronounced in Si MOSFETs than in III-V MOSFETs. This note points out an error in the original article but does not change the qualitative argument.
Keywords
III-V MOSFETs; injection velocity; virtual source (VS)
DOI
10.1109/TED.2012.2183599
Citation
IEEE Transactions on Electron Devices 59(4):994-1001 · April 2012
Date of this Version
12-2012
Recommended Citation
Liu, Yang; Luisier, Mathieu; Antoniadis, Dimitri; Majumdar, Amlan; and Lundstrom, Mark S., "On the Interpretation of Ballistic Injection Velocity in Deeply Scaled MOSFETs (vol 59, pg 994, 2012)" (2012). Birck and NCN Publications. Paper 1096.
http://dx.doi.org/10.1109/TED.2012.2183599