Controlled Growth of Ordered Nanopore Arrays in GaN
Abstract
High-quality, ordered nanopores in semiconductors are attractive for numerous biological, electrical, and optical applications. Here, GaN nanorods with continuous pores running axially through their centers were grown by organometallic vapor phase epitaxy. The porous nanorods nucleate on an underlying (0001)-oriented GaN film through openings in a SiN(x) template that are milled by a focused ion beam, allowing direct placement of porous nanorods. Nanopores with diameters ranging from 20-155 nm were synthesized with crystalline sidewalls.
Keywords
Nanopore; nanorod; GaN; organometallie vapor phase epitaxy; selective area growth; transmission electron microscopy; POROUS GAN; INORGANIC NANOTUBES; LATERAL OVERGROWTH; NITRIDE NANOTUBES; MORPHOLOGY; TRANSPORT; FILMS
DOI
10.1021/nl103418q
Citation
Nano Lett., 2011, 11 (2), pp 535–540 DOI: 10.1021/nl103418q
Date of this Version
2-2011
Recommended Citation
Wildeson, Isaac; Ewoldt, David; Colby, Robert; Stach, Eric A.; and Sands, Timothy D., "Controlled Growth of Ordered Nanopore Arrays in GaN" (2011). Birck and NCN Publications. Paper 1052.
http://dx.doi.org/10.1021/nl103418q