Effects of Positive and Negative Stresses on III-V MOSFETs With Al2O3 Gate Dielectric
Abstract
We subjected III-V InGaAs MOSFETs to positive and negative gate stresses. The stress polarity strongly affects the degradation kinetics of the gate current. Positive stress features a remarkable increase of the gate current, a net negative trapped charge, a large telegraphic noise, and soft breakdown, before the occurrence of the final catastrophic breakdown. Negative stress features only positive trapped charge until the hard breakdown.
Keywords
III-V MOSFET; stress; reliability; SOFT BREAKDOWN; MOBILITY; OXIDE; ENHANCEMENT; CHANNEL; CHARGE; LAYERS; NOISE
DOI
10.1109/LED.2011.2106107
Citation
Effects of Positive and Negative Stresses on III–V MOSFETs With \hbox {Al}_{2}\hbox {O}_{3} Gate Dielectric N. Wrachien; A. Cester; Y. Q. Wu; P. D. Ye; E. Zanoni; G. Meneghesso IEEE Electron Device Letters Year: 2011, Volume: 32, Issue: 4 Pages: 488 - 490
Date of this Version
4-2011
Recommended Citation
Wrachien, N.; Cester, A.; Wu, Y. Q.; Ye, Peide D.; Zanoni, E.; and Meneghesso, G., "Effects of Positive and Negative Stresses on III-V MOSFETs With Al2O3 Gate Dielectric" (2011). Birck and NCN Publications. Paper 1036.
http://dx.doi.org/10.1109/LED.2011.2106107