Characterization and Modeling of Trap Generation: A Primer on “Why & How the Transistors Degrade”

Author

Ahmad Ehteshamul Islam, Purdue UniversityFollow
Muhammad A. Alam, Birck Nanotechnology Center, School of Electrical and Computer Engineering, Purdue UniversityFollow

Abstract

Summary:

Traps at interfaces and bulks of oxides has always been a problem.

Efforts have been made to interpret trapping phenomena using essential, but simple, physics.

Modeling of these irreversible phenomena has innovative technological implications: (1) Optimization between off-state power and reliability (2) Degradation-free transistor

Comments

Poster for 2008 Research Review

Date of this Version

April 2008

Recommended Citation

Islam, Ahmad Ehteshamul and Alam, Muhammad A., "Characterization and Modeling of Trap Generation: A Primer on “Why & How the Transistors Degrade”" (2008). Birck Poster Sessions. Paper 19.
https://docs.lib.purdue.edu/nanoposter/19