Critical analysis of short-term negative bias temperature instability measurements: Explaining the effect of time-zero delay for on-the-fly measurements

Author

Ahmad Ehteshamul Islam, Purdue University - Main CampusFollow
Haldun Kufluoglu, TI-DallasFollow
Dhanoop Varghese, Purdue UniversityFollow
Muhammad A. Alam, Birck Nanotechnology Center, School of Electrical and Computer Engineering, Purdue UniversityFollow

Abstract

Recently several groups have used the reaction-diffusion (R-D) model with H2 diffusion in interpreting negative bias temperature Instability (NBTI) degradation. While the classical “H2 R-D” model can interpret long-term NBTI behavior, it is inconsistent with short-term stress data obtained by recently developed ultrafast measurements and widely used on-the-fly measurements. Moreover, experimental data from various techniques are not consistent with each other. Here, the authors show that the H2 R-D model must be generalized to consistently interpret NBTI at all time scales. The generalized model highlights the previously unappreciated role of time-zero delay in reconciling differences among the so-called delay-free on-the-fly measurements.

Keywords

Negative Bias Temperature Instability, time exponent, Reaction-Diffusion (R-D) Model, time-zero delay

Date of this Version

February 2007

Recommended Citation

Islam, Ahmad Ehteshamul; Kufluoglu, Haldun; Varghese, Dhanoop; and Alam, Muhammad A., "Critical analysis of short-term negative bias temperature instability measurements: Explaining the effect of time-zero delay for on-the-fly measurements" (2007). Other Nanotechnology Publications. Paper 85.
https://docs.lib.purdue.edu/nanodocs/85