Performance comparison between p-i-n tunneling transistors and conventional MOSFETs

Authors

Siyuranga O. Koswatta, Purdue University - Main CampusFollow
Mark S. Lundstrom, Purdue University - Main Campus
Dmitri E. Nikonov, Intel Corporation

Comments

IEEE TRANSACTIONS ON ELECTRON DEVICES, v. 56, n. 3, pp. 456, 2009.

Abstract

We present a detailed performance comparison between conventional n-i-n MOSFET transistors, and tunneling field-effect transistors (TFETs) based on the p-i-n geometry, using semiconducting carbon nanotubes as the model channel material. Quantum transport simulations are performed using the nonequilibrium Green's function formalism considering realistic phonon scattering and band-to-band tunneling mechanisms. Simulations show that TFETs have a smaller quantum capacitance at most gate biases. Despite lower on current, they can switch faster in a range of on/off current ratios. Switching energy for TFETs is observed to be fundamentally smaller than that for MOSFETs, leading to lower dynamic power dissipation. Furthermore, the beneficial features of TFETs are retained with different bandgap materials. These reasons suggest that the p-i-n TFET is well-suited for low power applications.

Keywords

band-to-band tunneling (BTBT), tunnel field-effect transistor (TFET), MOSFET, subthreshold swing, phonon scattering, carbon nanotube.

Date of this Version

3-2009