Abstract
The impact of the gate oxide and the silicon-on-insulator (SOI) body thickness on the electrical performance of SOI Schottky-barrier (SB) MOSFETs with fully nickel silicided source and drain contacts is experimentally investigated. The subthreshold swing S is extracted from the experimental data and serves as a measure for the carrier injection through the Sills. It is shown that decreasing the gate oxide and body thickness allows to strongly increase the carrier injection and hence, a significantly improved ON-state of SB-MOSFETs can be obtained.
Keywords
carrier injection; Schottky-barrier (SB)-MOSFET; ultrathin-body silicon-on-insulator (SOI), FIELD-EFFECT TRANSISTORS
Date of this Version
3-2007