Orientation dependence of the charge distribution and quantum capacitance in silicon nanowire transistors

Author

Abhijeet Paul Purdue University - Main Campus, Purdue University - Main Campus
Neophytos Neophytou, Purdue University - Main Campus
Gerhard Klimeck, Purdue University - Main CampusFollow

Abstract

CMOS devices are evolving from planar to 3D non-planar devices at nanometer scale to meet the ITRS [1] scaling requirements. These devices will operate under strong confinement and strain, regimes where atomistic effects are important. This work focuses on the quantum effects on the electrostatics of ultra-scaled silicon nanowire transistors. The method is based on the calculation of nanowire dispersion using an atomistic tight-binding (TB) model (sp3d5s* -SO) coupled self-consistently to a 2D Poisson equation solver. We enable the understanding of atomistic treatment in the charge distribution as well as the capacitance measurements in these ultra-scaled silicon nanowire transistors. This work will enhance the already available Bandstructure Lab tool on nanoHUB.org.

Comments

Proceedings of TECHCON 2008, Austin, TX

Date of this Version

September 2008

Recommended Citation

Paul, Abhijeet Purdue University - Main Campus; Neophytou, Neophytos; and Klimeck, Gerhard, "Orientation dependence of the charge distribution and quantum capacitance in silicon nanowire transistors" (2008). Other Nanotechnology Publications. Paper 141.
https://docs.lib.purdue.edu/nanodocs/141