Optimization of Surface Orientation for High-Performance, Low-Power and Robust FinFET SRAM

Authors

Saakshi Gangwal, Purdue University
Saibal Mukhopadhyay, Purdue University
Kaushik Roy, Purdue University

Abstract

We analyze the impact of surface orientation on stability and performance of FinFET SRAMs. We show that devices with proper orientations can improve static noise margin (SNM, 23-35%) and access time (22-33%) of 32nm FinFET SRAM compared to a design with devices of single (110) orientation.

Date of this Version

February 2006