Abstract
The quality of pn junction photodetectors made of Al0.2Ga0.8As has been investigated as a first step in the optimization of tandem solar cells. We have obtained 1 sun AM1.5 efficiencies of 16.1% for 0.25 cm2 Al0.22Ga0.78As solar cellsfabricated from molecular beam epitaxy (MBE) material. This efficiency is 3.2 percentage points higher than the previously best reported efficiency of 12.9% for an Al0.2Ga0.8As solar cell fabricated from MBE material.
Date of this Version
1990
DOI
10.1063/1.103575
Published in:
http://dx.doi.org/10.1063/1.103575
Comments
Copyright (1990) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Appl. Phys. Lett. 57 (1). 2 July 1990 and may be found at http://dx.doi.org/10.1063/1.103575. The following article has been submitted to/accepted by Applied Physics Letters. Copyright (1990) M. R. Melloch, S. P. Tobin, C. BajgarA. Keshavarzi, T. B. Stellwag, G. B. Lush, M. S. Lundstrom, K. Emery. This article is distributed under a Creative Commons Attribution 3.0 Unported License.