he electrical performance of Si‐doped n+‐n GaAs homojunction barriers grown by molecular‐beam epitaxy (MBE) is characterized and analyzed. We employed a successive etch technique to study hole injection currents in GaAs n+‐np+ solar cells. The results of the analysis show that minority‐carrier holes in our MBE‐grown material have a mobility of 293 cm2/V s for an n‐type Si‐doping level of 1.5×1016 cm−3 at 300 K. The interface recombination velocity for these homojunction barriers is estimated to be less than 1×103 cm/s, and it appears to be comparable to that recently observed for Si‐doped n+‐n GaAs homojunction barriers grown by metalorganic chemical vapor deposition. We present evidence that these n+‐n GaAs homojunctions, unlike p+‐p GaAs homojunctions, are almost as effective as AlGaAs heterojunctions in minority‐carrier confinement, and that their electrical performance is not degraded by heavy doping effects.


Copyright (1989) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in J. Appl. Phys. Vol. 66, pp. 273-277, 1989 and may be found at http://dx.doi.org/10.1063/1.343868. The following article has been submitted to/accepted by Journal of Applied Physics. Copyright (1989) H. L. Chuang, M. E. Klausmeier‐Brown, M. R. Melloch, and M. S. Lundstrom. This article is distributed under a Creative Commons Attribution 3.0 Unported License.

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J. Appl. Phys. 66, (1989); doi: 10.1063/1.343868



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