Abstract
The role of phonon scattering in carbon nanotube field-effect transistors (CNTFETs) is explored by solving the Boltzmann transport equation using the Monte Carlo method. The results show that elastic scattering in a short-channel CNTFET has a small effect on the source-drain current due to the long elastic mean-free path (mfp) (~1μm)(~1μm). If elastic scattering with a short mfp were to exist in a CNTFET, the on current would be severely degraded due to the one-dimensional channel geometry. At high drain bias, optical phonon scattering, which has a much shorter mfp (~10nm)(~10nm), is expected to dominate, even in a short-channel CNTFET. We find, however, that inelastic optical scattering has a small effect in CNTFETs under modest gate bias.
Date of this Version
2005
Published in:
Appl. Phys. Lett. 86, 193103 (2005); doi: 10.1063/1.1923183
Comments
Copyright (2005) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Appl. Phys. Lett. 86, 193103 (2005); doi: 10.1063/1.1923183 and may be found at http://dx.doi.org/10.1063/1.1923183. The following article has been submitted to/accepted by Applied Physics Letters. Copyright (2005) Jing Guo & Mark Lundstrom. This article is distributed under a Creative Commons Attribution 3.0 Unported License.