The role of phonon scattering in carbon nanotube field-effect transistors sCNTFETsd is explored by solving the Boltzmann transport equation using the Monte Carlo method. The results show that elastic scattering in a short-channel CNTFET has a small effect on the source-drain current due to the long elastic mean-free path smfpd s,1 mmd. If elastic scattering with a short mfp were to exist in a CNTFET, the on current would be severely degraded due to the one-dimensional channel geometry. At high drain bias, optical phonon scattering, which has a much shorter mfp s,10 nmd, is expected to dominate, even in a short-channel CNTFET. We find, however, that inelastic optical scattering has a small effect in CNTFETs under modest gate bias


Copyright (2005) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters 87, 043101 2005 and may be found at http://dx.doi.org/10.1063/1.2001158. The following article has been submitted to/accepted by Applied Physics Letters. Copyright (2005) Jing Wang, Eric Polizzi, Avik Ghosh, Supriyo Datta, and Mark Lundstrom. This article is distributed under a Creative Commons Attribution 3.0 Unported License.

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Appl. Phys. Lett. 87, 043101 (2005); http://doi.org/10.1063/1.2001158



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