We present a computationally efficient, two-dimensional quantum mechanical simulation scheme for modeling dissipative electron transport in thin body, fully depleted, n-channel, silicon-on-insulator transistors. The simulation scheme, which solves the nonequilibrium Green’s function equations self consistently with Poisson’s equation, treats the effect of scattering using a simple approximation inspired by the “Büttiker probes,” often used in mesoscopic physics. It is based on an expansion of the active device Hamiltonian in decoupled mode space. Simulation results are used to highlight quantum effects, discuss the physics of scattering and to relate the quantum mechanical quantities used in our model to experimentally measured low field mobilities.Additionally, quantum boundary conditions are rigorously derived and the effects of strong off-equilibrium transport are examined. This paper shows that our approximate treatment of scattering, is an efficient and useful simulation method for modeling electron transport in nanoscale, silicon-on-insulator transistors


Copyright (2003) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Journal of Applied Physics Volume 93, Issue 9 10.1063/1.1563298 and may be found at http://dx.doi.org/10.1063/1.1563298. The following article has been submitted to/accepted by Journal of Applied Physics. Copyright (2003) R. Venugopal, M. Paulsson, S. Goasguen, S. Datta, and M. S. Lundstrom. This article is distributed under a Creative Commons Attribution 3.0 Unported License.

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Journal of Applied Physics: Volume 93, Issue 9. doi: 10.1063/1.1563298



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