Carbon nanotube metal-insulator-semiconductor capacitors are examined theoretically. For the densely packed array of nanotubes on a planar insulator, the capacitance per tube is reduced due to the screening of the charge on the gate plane by the neighboring nanotubes. In contrast to the silicon metal-oxide-semiconductor capacitors, the calculated C-VC-V curves reflect the local peaks of the one-dimensional density-of-states in the nanotube. This effect provides the possibility to use C-VC-V measurements to diagnose the electronic structures of nanotubes. Results of the electrostatic calculations can also be applied to estimate the upper-limit on-current of carbon nanotube field-effect transistors.
Date of this Version
Applied Physics Letters: Volume 81, Issue 8. doi: 10.1063/1.1502188