Ex situ nonalloyed ohmic contacts were made to n- and p‐type GaAs using low‐temperature molecular beam epitaxy. For n‐type GaAs, Ag, and Ti/Au nonalloyed contacts displayed specific contact resistitivities of mid 10-7 ohm cm2. For p‐type GaAs, nonalloyed Ti/Au contacts with specific contact resistivities of about 10-7 ohm cm2 were obtained.
Date of this Version
Applied Physics Letters: Volume 66, Issue 11, 10.1063/1.113218