The design and development of high-frequency, high-power static induction transistors in 4H-silicon carbide
Abstract
The need for high frequency, high power devices continues to grow with the increase in wireless communication, radar systems, HDTV, and other military application of the RF spectrum. Traditionally tubes have served the need for high power, but with advancements in wide band gap semiconductor technology, solid state devices are now capable of competing in this realm. The properties of silicon carbide such as the large breakdown field and high thermal conductivity can be exploited by a device such as the static induction transistor (SIT). The SIT is a high density, high power device which shows promise in power RF applications. This work will cover the design and implementation of a process allowing for aggressive scaling of devices to increase their frequency performance. Devices have been fabricated demonstrating a record fT of 7GHz using this process. Initial power measurements have been made indicating great promise for these devices. Finally suggestions for future work with SITs in silicon carbide are given.
Degree
Ph.D.
Advisors
Melloch, Purdue University.
Subject Area
Electrical engineering
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