Scattering matrix studies of silicon devices
Abstract
This thesis describes the further development and application of the Scattering Matrix Approach, a novel simulation technique for rigorously solving the spatially dependent Boltzmann equation in semiconductor devices. After a brief survey of present device simulation methods, a detailed description is given of the self-consistent, 1D Scattering Matrix device simulation procedure. The approach is then demonstrated in a critical analysis of the assumptions employed in a widely-used, but less rigorous, model based upon the hydrodynamic equations. Next, transport through a Np$\sp+$ heterojunction diode is investigated in detail. Results from a microscopic study of transport in thin base silicon bipolar transistors are then presented. This is followed by a demonstration of full self-consistent bipolar simulation and a study of base pushout effects. Finally, recommendations for future research are given.
Degree
Ph.D.
Advisors
Lundstrom, Purdue University.
Subject Area
Electrical engineering|Condensation
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