Studies of heterojunction bipolar transistor device physics and new device concepts
Abstract
This thesis describes experimental and theoretical studies of the physics governing heterojunction bipolar transistor (HBT) operation. Detailed characterization and simulation of surface recombination in GaAs-based devices are performed to determine the effects of surface Fermi level pinning on the observed characteristics. The dependence of perimeter recombination on emitter aluminum composition in AlGaAs/GaAs HBT's is explored. Nonequilibrium minority electron transport through the base of high-speed InP/InGaAs HBT's is investigated by Monte Carlo simulation. Finally, a new device concept, the pseudo-HBT, is examined which uses heavy doping effects to obtain HBT-like operation. The device potential is confirmed with GaAs pseudo-HBT's. Fabricated InAs pseudo-HBT's are described, with the ultimate goal of achieving ultra-high speed bipolar transistors with very low power consumption.
Degree
Ph.D.
Advisors
Lundstrom, Purdue University.
Subject Area
Electrical engineering|Condensation
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