Characterization and simulation of the contiguous domain oscillator
Abstract
This project is a continuation of an ongoing research effort on a potential microwave source--the Contiguous Domain Oscillator (CDO). By combining the transferred electron effect in n-type GaAs material together with the internal two-dimensional electrostatic geometry, this novel device provides high frequency oscillation and high frequency tunability. The frequency is determined by the spacing between adjacent domains rather than by a transit time, as in conventional diode oscillators. Therefore high frequency operation is achievable without submicron technology. The CDO has a planar structure and can be easily integrated into the microwave subsystems now under development in industry. The RG-MESFET version of the CDO device fabricated at ITT Gallium Arsenide Technology Center is characterized, including the IV curves, power output, and frequency tunability. The steady-state analysis of the ideal RG-FET is performed to aid in the understanding of the device IV characteristics and regions of operation. An equivalent circuit model is established to simulate the transient behavior of the device, and mode conversion between single domain oscillation and the contiguous domain oscillation.
Degree
Ph.D.
Advisors
Cooper, Purdue University.
Subject Area
Electrical engineering
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