The scattering matrix approach to device analysis
Abstract
A new approach for simulating carrier transport in semiconductor devices is proposed and demonstrated. The approach begins by dividing a device into a number of small elements and defining scattering matrices, which relate the fluxes incident upon each element to the emerging fluxes. By cascading the scattering matrices for each element, carrier transport through the entire device is simulated. When the scattering matrices are computed by solving the Boltzmann equation, low-, high-, and non-stationary transport effects can be simulated, but the scattering matrix may also be computed from a wave perspective to treat quantum interference effects within a slab. The ability of this new approach to treat sophisticated transport effects in modern devices is demonstrated by simulating transport in bulk silicon (both high-field, and low-field) and non-stationary transport in model submicron silicon structures, such as M-S diode, and bipolar transistors. A comparative analysis of high speed performance of thin base bipolar transistors using the scattering matrix approach is also discussed.
Degree
Ph.D.
Advisors
Lundstrom, Purdue University.
Subject Area
Electrical engineering
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