Measurement of the np product and minority carrier mobility in heavily doped p-type gallium arsenide
Abstract
This thesis is concerned with the effects of heavy impurity doping on band structure and minority carrier transport in p-type GaAs. It includes discussion of the first measurements to demonstrate the profound influence of effective bandgap shrinkage on technologically important GaAs-based electrical devices, including heterojunction bipolar transistors and solar cells. It also explores a promising technique for determining the effect of heavy doping on the minority electron mobility, the time-of-flight method. Several examples which illustrated the influence of effective bandgap shrinkage on GaAs-based bipolar devices are presented.
Degree
Ph.D.
Advisors
Melloch, Purdue University.
Subject Area
Electrical engineering|Condensation
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