Electrical behavior of an inversion layer at aluminum(x)gallium(1-x)arsenide/gallium-arsenide heterojunction
Abstract
In this work, we present both experimental and theoretical study on the electrical behavior of a minority carrier inversion layer at the AlGaAs/GaAs heterojunction. The electron inversion layer confined at AlGaAs/GaAs interface is known to form quantized subbands. The thermionic field emission from these quantized subbands is expected to be different from the emission over a common Schottky barrier. In order to calculate the thermionic emission from such a system, we have developed a modified thermionic field emission model which is subsequently tested on both electron and hole inversion layers. The good agreement between the theory and experiment suggests that the theory may be used to predict the intrinsic performance limit of heterojunction enhancement mode devices in AlGaAs/GaAs material system.
Degree
Ph.D.
Advisors
Cooper, Purdue University.
Subject Area
Electrical engineering
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