A bias tunable monolithic microwave oscillator--the Contiguous Domain Oscillator
Abstract
A novel concept in solid state microwave signal generation, first proposed by J. A. Cooper Jr. and K. K. Thornber in January 1984 IEEE Electron Device Letters (Coo84), has been investigated. The device is called the Contiguous Domain Oscillator, and originally based on 1D computer simulations (Coo85), has been fabricated and further simulated. The 1D simulations have shown that the device should be capable of generating bias-dependent output frequencies in the 10-200 GHz range, as well as being modeled as an ideal current source. The fabrication sequence has shown the ability to easily manufacture these devices. These features, along with the fact that the device is capable of being monolithically integrated, makes it an excellent candidate for the leader into the next generation of solid state microwave oscillators. This thesis describes the work done to fabricate the buried channel version of this device, and simulate in 2D both the buried channel and MODFET channel devices. Also contained is a historical perspective of solid state microwave oscillators, as well as showing why this device should be capable of outperforming the existing devices. Further enhancements to the simulator may be required if the simulation results fail to predict experimental data, and possible directions to take in this event are outlined. As of this writing, no experimental data has been obtained.
Degree
Ph.D.
Advisors
Cooper, Purdue University.
Subject Area
Electrical engineering
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