Quantum mechanical analysis of ultra-small devices
Abstract
With the advance and perpetual refinement of fabrication techniques such as the Molecular Beam Epitaxy and Electron Beam Litography, there has been a growing interest in semiconductor devices within the submicron range. On such a length scale, the most appropriate description of any transport property should be based on a fully quantum-mechanical formalism. The first part of this thesis describes a model for analyzing quantum effects in the ballistic or collisionless regime including a self-consistent description of the space-charge effect. The second part of this thesis is devoted to a fully quantum-mechanical treatment of impurity scattering in semiconductor devices. This formalism is applied to the analysis of the problem of weak, strong localization and universal conductance fluctuations in ultra-small devices. Additionally, this thesis was devoted to the theoretical investigation of the influence of impurity scattering on the performance of recently grown Aharanov-Bohm semiconductor microstructures. The influence of impurity scattering on the conductance modulation of a novel Quantum Interference Transistor (QUIT) has also been considered.
Degree
Ph.D.
Advisors
Datta, Purdue University.
Subject Area
Electrical engineering
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