INVESTIGATION OF UNIFIED TABLE AND ANALYTICAL DEVICE MODELS FOR ACCURATE CIRCUIT SIMULATION
Abstract
The modeling of semiconductor device characteristics using unified table and analytical models for application to circuit simulation has been studied. A unified model consists of an analytical model which has some of its operating voltages scaled by interpolated tables and some of its parameters represented by interpolated tables. The applications of unified models include the accurate modeling of the currents, conductances, charges and capacitances of semiconductor devices. The applications emphasized in this study deal with modeling the small-geometry MOS transistor. Special considerations were identified so that the unified models could produce monotonic device characteristics. The unified model technique has been implemented into a circuit simulator which does transient simulation. The circuit simulator also has the capability of using analytical models and table models for the representation of semiconductor devices. The development of a unified model for a particular device characteristic is under the software users control by using a table and parameter extraction program. The third software program developed does the numerical simulation of the MOS transistor in two dimensions. This program was used to generate current, capacitance and charge data for use with unified models in the extraction and circuit simulation programs. Measured device characteristics for the current were also used in this study of unified models.
Degree
Ph.D.
Subject Area
Electrical engineering
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