A CRITICAL ANALYSIS OF CARRIER TRANSPORT IN HETEROJUNCTION BIPOLAR TRANSISTORS (MONTE CARLO, BOLTZMANN, HETEROSTRUCTURES)
Abstract
This work describes the modeling of carrier transport in heterojunction bipolar transistors (HBT's). HBT design issues are reviewed as well as charge transport models. A study of carrier transport through ballistic and graded bases is described and performance degrading mechanisms discussed. The transient phenomenon, velocity overshoot, is examined in a device context and its impact on overall HBT performance explored. A novel collector structure which takes advantage of overshoot phenomena by spatially extending it is proposed. An initial study of transport across a forward biased junction is discussed and transport models evaluated.
Degree
Ph.D.
Subject Area
Electrical engineering
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