REACTIVE RADIO FREQUENCY MAGNETRON SPUTTERED ALUMINUM-NITRIDE ON SILICON FOR SURFACE ACOUSTIC WAVE DEVICE APPLICATIONS
Abstract
Aluminum nitride films deposited by reactive RF magnetron sputtering onto silicon substrates for surface acoustic wave device applications were investigated. The influence of sputtering procedures and parameters on the structure and quality of the resulting AIN films were studied. Successful deposition of (0001) preferentially oriented AIN films on silicon substrates at temperatures below 300(DEGREES)C was accomplished. The first demonstrations of SAW devices including delay lines, acoustoelectric convolvers, and resonators on the AIN-on-Si structure resulted from the investigation. The acoustic medium performance characteristics of electromechanical coupling, velocity, temperature variation of velocity, and velocity dispersion were experimentally tested and compared with theoretical predictions from the literature. Fabrication and testing of SAW delay lines on the composite film structure of AIN-on-ZnO-on-Si were also carried out.
Degree
Ph.D.
Subject Area
Electrical engineering
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